发明授权
- 专利标题: Adder including transistor having oxide semiconductor layer
- 专利标题(中): 加法器包括具有氧化物半导体层的晶体管
-
申请号: US13472733申请日: 2012-05-16
-
公开(公告)号: US08638123B2公开(公告)日: 2014-01-28
- 发明人: Tatsuya Ohnuki
- 申请人: Tatsuya Ohnuki
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2011-114035 20110520
- 主分类号: H03K19/094
- IPC分类号: H03K19/094 ; H03K17/00
摘要:
A circuit in which a storage function and an arithmetic function are combined is proposed by using a transistor with low off-state current for forming a storage element. When the transistor with low off-state current is used, electric charge can be held, for example, in a node or the like between a source or a drain of the transistor with low off-state current and a gate of another transistor. Thus, the node or the like between one of the source or the drain of the transistor with low off-state current and the gate of the another transistor can be used as a storage element. In addition, leakage current accompanied by the operation of an adder can be reduced considerably. Accordingly, a signal processing circuit consuming less power can be formed.
公开/授权文献
- US20120297221A1 ADDER 公开/授权日:2012-11-22
信息查询
IPC分类: