发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US12907653申请日： 2010-10-19
-
公开(公告)号： US08637902B2公开(公告)日： 2014-01-28
- 发明人: Ki Yeol Park , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
- 申请人： Ki Yeol Park , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
- 申请人地址： KR Suwon, Gyunggi-do
- 专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址： KR Suwon, Gyunggi-do
- 代理机构： McDermott Will & Emery LLP
- 优先权： KR10-2010-0026804 20100325
- 主分类号： H01L29/737
- IPC分类号： H01L29/737 ; H01L29/778
摘要：
There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.
公开/授权文献
信息查询
IPC分类:
