Invention Grant
- Patent Title: Package and high frequency terminal structure for the same
- Patent Title (中): 封装和高频端子结构相同
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Application No.: US13164155Application Date: 2011-06-20
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Publication No.: US08637873B2Publication Date: 2014-01-28
- Inventor: Kazutaka Takagi
- Applicant: Kazutaka Takagi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-258223 20101118
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
According to one embodiment, provided is a package and high frequency terminal structure for the same including: a conductive base plate; a semiconductor device disposed on the conductive base plate; a metal wall disposed on the conductive base plate to house the semiconductor device; a through-hole disposed in input and output units of the metal wall; a lower layer feed through inserted into the through-hole and disposed on the conductive base plate; and an upper layer feed through disposed on the lower layer feed through, and adhered to a sidewall of the metal wall. The lower layer feed through is surrounded by the metal wall.
Public/Granted literature
- US20120126246A1 PACKAGE AND HIGH FREQUENCY TERMINAL STRUCTURE FOR THE SAME Public/Granted day:2012-05-24
Information query
IPC分类: