Invention Grant
US08637873B2 Package and high frequency terminal structure for the same 失效
封装和高频端子结构相同

Package and high frequency terminal structure for the same
Abstract:
According to one embodiment, provided is a package and high frequency terminal structure for the same including: a conductive base plate; a semiconductor device disposed on the conductive base plate; a metal wall disposed on the conductive base plate to house the semiconductor device; a through-hole disposed in input and output units of the metal wall; a lower layer feed through inserted into the through-hole and disposed on the conductive base plate; and an upper layer feed through disposed on the lower layer feed through, and adhered to a sidewall of the metal wall. The lower layer feed through is surrounded by the metal wall.
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