发明授权
- 专利标题： Thin film transistor
- 专利标题（中）： 薄膜晶体管
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申请号： US12490447申请日： 2009-06-24
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公开(公告)号： US08637866B2公开(公告)日： 2014-01-28
- 发明人: Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki , Takuya Hirohashi
- 申请人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki , Takuya Hirohashi
- 申请人地址： JP Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa
- 代理机构： Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权： JP2008-169286 20080627; JP2009-046433 20090227; JP2009-129313 20090528
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.
公开/授权文献
- US20090321737A1 THIN FILM TRANSISTOR 公开/授权日：2009-12-31
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