发明授权
US08637366B2 Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
有权
不具有高阻抗状态和低阻抗状态的介质反熔丝的非易失性存储单元
- 专利标题： Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
- 专利标题（中）： 不具有高阻抗状态和低阻抗状态的介质反熔丝的非易失性存储单元
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申请号： US10955549申请日： 2004-09-29
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公开(公告)号： US08637366B2公开(公告)日： 2014-01-28
- 发明人: S. Brad Herner , Andrew J. Walker
- 申请人： S. Brad Herner , Andrew J. Walker
- 申请人地址： US CA Milpitas
- 专利权人： Sandisk 3D LLC
- 当前专利权人： Sandisk 3D LLC
- 当前专利权人地址： US CA Milpitas
- 代理机构： Dugan & Dugan, PC
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
A memory cell according to the present invention comprises a bottom conductor, a doped semiconductor pillar, and a top conductor. The memory cell does not include a dielectric rupture antifuse separating the doped semiconductor pillar from either conductor, or within the semiconductor pillar. The memory cell is formed in a high-impedance state, in which little or no current flows between the conductors on application of a read voltage. Application of a programming voltage programs the cell, converting the memory cell from its initial high-impedance state to a low-impedance state. A monolithic three dimensional memory array of such cells can be formed, comprising multiple memory levels, the levels monolithically formed above one another.
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