A method of producing a semiconductor wafer, which includes: placing a wafer (10) provided with a substrate (11) and a semiconductor layer (20) formed thereon, on a carrier plate (fixing plate) (31) of a grinder via fixing wax (33a and 33b) such that the surface (10a) to be ground faces upward; heating the carrier plate to soften the fixing wax; pressure-contacting the wafer from the side of the surface (10a) to be ground using an air bag such that a portion of the softened fixing wax spreads and protrudes from the peripheral edge of the wafer; cooling the carrier plate while applying pressure to cure the fixing wax and fix the wafer onto the carrier plate; and rotating the surface (10a) to be ground of the fixed wafer while pressure-contacting the surface (10a) to the grinding plate of the grinder, thereby grinding the surface (10a) to be ground.