发明授权
US08633533B2 Semiconductor integrated circuit having capacitor for providing stable power and method of manufacturing the same
有权
具有用于提供稳定功率的电容器的半导体集成电路及其制造方法
- 专利标题： Semiconductor integrated circuit having capacitor for providing stable power and method of manufacturing the same
- 专利标题（中）： 具有用于提供稳定功率的电容器的半导体集成电路及其制造方法
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申请号： US13340847申请日： 2011-12-30
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公开(公告)号： US08633533B2公开(公告)日： 2014-01-21
- 发明人: Jong Su Kim
- 申请人： Jong Su Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： William Park & Associates Patent Ltd.
- 优先权： KR10-2011-0074469 20110727
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/20
摘要：
A capacitor and a method of manufacturing the same are provided. A dummy capacitor group is formed in the peripheral circuit area and includes a dummy storage node contact unit, a dielectric, and a dummy plate electrode. A metal oxide semiconductor (MOS) capacitor is formed in the peripheral circuit area and connected to the dummy capacitor group in parallel. Capacitance of the dummy capacitor group may be greater than that of the MOS capacitor.
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