发明授权
- 专利标题: Transistors with immersed contacts
- 专利标题(中): 具有浸没触点的晶体管
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申请号: US13613614申请日: 2012-09-13
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公开(公告)号: US08633515B2公开(公告)日: 2014-01-21
- 发明人: Marius K. Orlowski , James D. Burnett
- 申请人: Marius K. Orlowski , James D. Burnett
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 Sherry W. Schumm; David G. Dolezal
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
Embodiments of a semiconductor structure include a first current electrode region, a second current electrode region, and a channel region. The channel region is located between the first current electrode region and the second current electrode region, and the channel region is located in a fin structure of the semiconductor structure. A carrier transport in the channel region is generally in a horizontal direction between the first current electrode region and the second current electrode region. A contact extends into the first current electrode region and is electrically coupled to the first current electrode region.
公开/授权文献
- US20130009222A1 TRANSISTORS WITH IMMERSED CONTACTS 公开/授权日:2013-01-10
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