- 专利标题： Creating anisotropically diffused junctions in field effect transistor devices
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申请号： US12943987申请日： 2010-11-11
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公开(公告)号： US08633096B2公开(公告)日： 2014-01-21
- 发明人: Brian J. Greene , Jeffrey B. Johnson , Qingqing Liang , Edward P. Maciejewski
- 申请人： Brian J. Greene , Jeffrey B. Johnson , Qingqing Liang , Edward P. Maciejewski
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Paroshos Kalaitzis
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
A method of forming a transistor device includes implanting a diffusion inhibiting species in a semiconductor-on-insulator substrate comprising a bulk substrate, a buried insulator layer, and a semiconductor-on-insulator layer, the semiconductor-on-insulator substrate having one or more gate structures formed thereon such that the diffusion inhibiting species is disposed in portions of the semiconductor-on-insulator layer corresponding to a channel region, and disposed in portions of the buried insulator layer corresponding to source and drain regions. A transistor dopant species is introduced in the source and drain regions. An anneal is performed so as to diffuse the transistor dopant species in a substantially vertical direction while substantially preventing lateral diffusion of the transistor dopant species into the channel region.
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