发明授权
US08614445B2 Alkylsilane laminate, production method thereof and thin-film transistor
有权
烷基硅烷层压体，其制造方法和薄膜晶体管
- 专利标题： Alkylsilane laminate, production method thereof and thin-film transistor
- 专利标题（中）： 烷基硅烷层压体，其制造方法和薄膜晶体管
-
申请号： US13322830申请日： 2010-05-27
-
公开(公告)号： US08614445B2公开(公告)日： 2013-12-24
- 发明人: Takashi Kushida , Hiroyoshi Naito
- 申请人： Takashi Kushida , Hiroyoshi Naito
- 申请人地址： JP Osaka
- 专利权人： Teijin Limited
- 当前专利权人： Teijin Limited
- 当前专利权人地址： JP Osaka
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2009-129173 20090528; JP2009-129190 20090528
- 国际申请： PCT/JP2010/059032 WO 20100527
- 国际公布： WO2010/137664 WO 20101202
- 主分类号： H01L29/04
- IPC分类号： H01L29/04
摘要：
Provided is an alkylsilane laminate with which it is possible to obtain an organic semiconductor film having excellent semiconductor properties. Such a laminate can be useful for an organic thin-film transistor. The alkylsilane laminate comprises an underlayer (Sub) having hydroxyl groups at the surface and an alkylsilane thin film (AS) formed on this underlayer. The alkylsilane laminate is a laminate wherein the critical surface energy Ec of the alkylsilane thin film and the number of carbons (X) of the alkylsilane satisfies the following formula (1): Ec≦29.00−0.63x (mN/m) (1) Also provided is a thin-film transistor (10) having such an alkylsilane laminate (Sub, AS).
公开/授权文献
信息查询
IPC分类:
