发明授权
- 专利标题： Solid-state image device, manufacturing method thereof, and image capturing apparatus
- 专利标题（中）： 固体摄像装置及其制造方法以及摄像装置
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申请号： US13717023申请日： 2012-12-17
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公开(公告)号： US08614412B2公开(公告)日： 2013-12-24
- 发明人: Yasushi Tateshita
- 申请人： Sony Corporation
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Rader, Fishman & Grauer PLLC
- 优先权： JP2009-050131 20090304
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L21/70
摘要：
A solid-state image device is provided which includes: a photoelectric conversion portion which obtains a signal charge by photoelectric conversion of incident light; a pixel transistor portion which outputs a signal charge generated by the photoelectric conversion portion; a peripheral circuit portion which is provided at the periphery of a pixel portion including the photoelectric conversion portion and the pixel transistor portion and which has an NMOS transistor and a PMOS transistor; a first stress liner film which has a compressive stress and which is provided on the PMOS transistor; and a second stress liner film which has a tensile stress and which is provided on the NMOS transistor. In the solid-state image device described above, the photoelectric conversion portion, the pixel transistor portion, and the peripheral circuit portion are provided in and/or on a semiconductor substrate.
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