发明授权
US08614033B2 Resist film, resist coated mask blanks and method of forming resist pattern using the resist film, and chemical amplification type resist composition
有权
抗蚀剂膜，抗蚀剂涂层掩模坯料和使用抗蚀剂膜形成抗蚀剂图案的方法，以及化学放大型抗蚀剂组合物
- 专利标题： Resist film, resist coated mask blanks and method of forming resist pattern using the resist film, and chemical amplification type resist composition
- 专利标题（中）： 抗蚀剂膜，抗蚀剂涂层掩模坯料和使用抗蚀剂膜形成抗蚀剂图案的方法，以及化学放大型抗蚀剂组合物
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申请号： US13367512申请日： 2012-02-07
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公开(公告)号： US08614033B2公开(公告)日： 2013-12-24
- 发明人: Tomotaka Tsuchimura , Takeshi Inasaki , Hiroo Takizawa
- 申请人： Tomotaka Tsuchimura , Takeshi Inasaki , Hiroo Takizawa
- 申请人地址： JP Tokyo
- 专利权人： FUJIFILM Corporation
- 当前专利权人： FUJIFILM Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2011-035229 20110221
- 主分类号： G03F1/20
- IPC分类号： G03F1/20 ; G03C5/00
摘要：
A resist film formed by using a chemical amplification type resist composition containing (A) a high molecular compound having a structure wherein a hydrogen atom of a phenolic hydroxyl group is substituted by a group represented by the following general formula (I), (B) a compound generating an acid upon irradiation with actinic rays or radiation, and an organic solvent, and the film thickness is 10 to 200 nm. wherein, R1 represents a hydrocarbon group, R2 represents a hydrogen atom or a hydrocarbon group, and Ar represents an aryl group. R1 may also bind to Ar to form a ring which may also contain a heteroatom. * represents a binding position with an oxygen atom of the phenolic hydroxyl group.
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