发明授权
US08609178B2 Substrates for spatially selective micron and nanometer scale deposition and combinatorial modification and fabrication 有权
用于空间选择性微米和纳米尺度沉积和组合修饰和制造的衬底

  • 专利标题: Substrates for spatially selective micron and nanometer scale deposition and combinatorial modification and fabrication
  • 专利标题(中): 用于空间选择性微米和纳米尺度沉积和组合修饰和制造的衬底
  • 申请号: US10562371
    申请日: 2004-06-30
  • 公开(公告)号: US08609178B2
    公开(公告)日: 2013-12-17
  • 发明人: Peter John HastwellTimothy Mark Kaethner
  • 申请人: Peter John HastwellTimothy Mark Kaethner
  • 申请人地址: AU South Australia
  • 专利权人: Raustech Pty Ltd
  • 当前专利权人: Raustech Pty Ltd
  • 当前专利权人地址: AU South Australia
  • 代理机构: Brinks Gilson & Lione
  • 优先权: AU2003903295 20030630
  • 国际申请: PCT/AU2004/000865 WO 20040630
  • 国际公布: WO2005/001121 WO 20050106
  • 主分类号: H01L21/00
  • IPC分类号: H01L21/00 C12Q1/68
Substrates for spatially selective micron and nanometer scale deposition and combinatorial modification and fabrication
摘要:
A substrate (1) for spatially selective micron and nanometer scale deposition and/or reaction, which has a support (3), a conductive layer (5) on the support, a dielectric layer (7) to hold an electrostatic charge pattern such as a photoconductive layer of a material which dissipates an electric charge upon receiving incident radiation thereon, and a chemically functional layer (9), such that electrostatic charge patterns may be formed in a predetermined manner upon the substrate to influence the movement of charged droplets in an emulsion (15) on the substrate. The chemically functional layer either provides a surface for chemical functionalization of the substrate or prevents access or reaction to the dielectric or photoconductive layer.
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