发明授权
- 专利标题： Power MOS device fabrication
- 专利标题（中）： 功率MOS器件制造
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申请号： US13604286申请日： 2012-09-05
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公开(公告)号： US08597998B2公开(公告)日： 2013-12-03
- 发明人: Anup Bhalla , Sik K. Lui , Tiesheng Li
- 申请人： Anup Bhalla , Sik K. Lui , Tiesheng Li
- 申请人地址： BM
- 专利权人： Alpha & Omega Semiconductor Limited
- 当前专利权人： Alpha & Omega Semiconductor Limited
- 当前专利权人地址： BM
- 代理机构： Van Pelt, Yi & James LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
Fabricating a semiconductor device includes forming a mask on a substrate having a top substrate surface; forming a gate trench in the substrate, through the mask; depositing gate material in the gate trench; removing the mask to leave a gate structure; implanting a body region; implanting a source region; forming a source body contact trench having a trench wall and a trench bottom; forming a plug in the source body contact trench, wherein the plug extends below a bottom of the body region; and disposing conductive material in the source body contact trench, on top of the plug.
公开/授权文献
- US20120329225A1 POWER MOS DEVICE FABRICATION 公开/授权日：2012-12-27
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