- 专利标题: Diode-less array for one-time programmable memory
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申请号: US12346706申请日: 2008-12-30
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公开(公告)号: US08593850B2公开(公告)日: 2013-11-26
- 发明人: Kuan-Fu Chen , Yin-Jen Chen , Tzung-Ting Han , Ming-Shang Chen
- 申请人: Kuan-Fu Chen , Yin-Jen Chen , Tzung-Ting Han , Ming-Shang Chen
- 申请人地址: TW Hsinchu
- 专利权人: MACRONIX International Co., Ltd.
- 当前专利权人: MACRONIX International Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C17/06 ; G11C17/18
摘要:
A one-time programmable memory array includes a first row conductor extending in a first row direction and disposed at a first elevation, a second row conductor extending in a second row direction and disposed at a second elevation and a column conductor extending in a column direction and disposed adjacent to the first row conductor and adjacent to the second row conductor. The array also includes a dielectric layer covering at least a portion of the column conductor, a fuse link coupled between the dielectric layer on the column conductor and the second row conductor.
公开/授权文献
- US20090116274A1 DIODE-LESS ARRAY FOR ONE-TIME PROGRAMMABLE MEMORY 公开/授权日:2009-05-07
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