Invention Grant
- Patent Title: Dual-gate normally-off nitride transistors
- Patent Title (中): 双栅极常关氮化物晶体管
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Application No.: US13557414Application Date: 2012-07-25
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Publication No.: US08587031B2Publication Date: 2013-11-19
- Inventor: Bin Lu , Tomas Palacios
- Applicant: Bin Lu , Tomas Palacios
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Gesmer Updegrove LLP
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A dual-gate normally-off nitride transistor that includes a first gate structure formed between a source electrode and a drain electrode for controlling a normally-off channel region of the dual-gate normally-off nitride transistor. A second gate structure is formed between the first gate structure and the drain electrode for modulating a normally-on channel region underneath the second gate structure. The magnitude of the threshold voltage of the second gate structure is smaller than the drain breakdown of the first gate structure for proper operation of the dual-gate normally-off nitride transistor.
Public/Granted literature
- US20130020614A1 DUAL-GATE NORMALLY-OFF NITRIDE TRANSISTORS Public/Granted day:2013-01-24
Information query
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