A method is provided for forming a fine pattern. In the method, a first fine pattern and a first metal pattern are formed by respectively patterning a first fine pattern layer on a base substrate and a first metal layer on the first fine pattern layer. A second fine pattern layer and a second metal layer are sequentially formed over the first fine pattern and the first metal pattern. The second metal layer is patterned, so that a second metal pattern between adjacent portions of the first fine pattern. The second fine pattern layer is patterned using the second metal pattern as a mask, so that a second fine pattern is formed between adjacent portions of the first fine pattern.