发明授权
US08569760B2 Thin film transistor having oxide semiconductor layer as ohmic contact layer and method of fabricating the same
有权
具有氧化物半导体层作为欧姆接触层的薄膜晶体管及其制造方法
- 专利标题： Thin film transistor having oxide semiconductor layer as ohmic contact layer and method of fabricating the same
- 专利标题（中）： 具有氧化物半导体层作为欧姆接触层的薄膜晶体管及其制造方法
-
申请号： US12926114申请日： 2010-10-27
-
公开(公告)号： US08569760B2公开(公告)日： 2013-10-29
- 发明人: Chun-Gi You
- 申请人： Chun-Gi You
- 申请人地址： KR Yongin, Gyeonggi-Do
- 专利权人： Samsung Display Co., Ltd.
- 当前专利权人： Samsung Display Co., Ltd.
- 当前专利权人地址： KR Yongin, Gyeonggi-Do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2009-0117076 20091130
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A thin film transistor TFT, including a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, an active layer on the gate insulating layer, the active layer corresponding to the gate electrode and including a channel region, source and drain electrodes contacting the active layer, the source and drain electrodes being separate from each other, and an ohmic contact layer between the active layer and at least one of the source and drain electrodes, the ohmic contact layer including an oxide semiconductor material.
公开/授权文献
信息查询
IPC分类:
