Invention Grant
- Patent Title: Dielectrics containing at least one of a refractory metal or a non-refractory metal
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Application No.: US13368206Application Date: 2012-02-07
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Publication No.: US08557672B2Publication Date: 2013-10-15
- Inventor: Leonard Forbes , Kie Y. Ahn , Arup Bhattacharyya
- Applicant: Leonard Forbes , Kie Y. Ahn , Arup Bhattacharyya
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of electronic systems and devices. Embodiments can include electronic apparatus and methods of forming the electronic apparatus having a tantalum aluminum oxynitride film. The tantalum aluminum oxynitride film may be structured as one or more monolayers. The tantalum aluminum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a tantalum aluminum oxynitride film.
Public/Granted literature
- US20120133428A1 DIELECTRICS CONTAINING AT LEAST ONE OF A REFRACTORY METAL OR A NON-REFRACTORY METAL Public/Granted day:2012-05-31
Information query
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