Invention Grant
US08542541B2 Memory architecture having two independently controlled voltage pumps
有权
具有两个独立控制的电压泵的存储架构
- Patent Title: Memory architecture having two independently controlled voltage pumps
- Patent Title (中): 具有两个独立控制的电压泵的存储架构
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Application No.: US13407660Application Date: 2012-02-28
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Publication No.: US08542541B2Publication Date: 2013-09-24
- Inventor: Ryan T. Hirose , Fredrick Jenne , Vijay Srinivasaraghavan , Igor G. Kouznetsov , Paul Fredrick Ruths , Cristinel Zonte , Bogdan Georgescu , Leonard Vasile Gitlan , James Paul Myers
- Applicant: Ryan T. Hirose , Fredrick Jenne , Vijay Srinivasaraghavan , Igor G. Kouznetsov , Paul Fredrick Ruths , Cristinel Zonte , Bogdan Georgescu , Leonard Vasile Gitlan , James Paul Myers
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
In embodiments described herein, a memory architecture has an array of non-volatile memory cells and a pair of independently controlled voltage pumps. The pair of voltage pumps is coupled for supplying both positive and negative voltage biases to the memory array during program and erase operations, such that a sum of the magnitudes of the positive and negative voltage biases is applied across a storage node of an accessed memory cell.
Public/Granted literature
- US20120188826A1 MEMORY ARCHITECTURE HAVING TWO INDEPENDENTLY CONTROLLED VOLTAGE PUMPS Public/Granted day:2012-07-26
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