发明授权
- 专利标题: Ceramic material, member for semiconductor manufacturing equipment, sputtering target member and method for producing ceramic material
- 专利标题(中): 陶瓷材料,半导体制造装置用构件,溅射靶构件以及陶瓷材料的制造方法
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申请号: US13478591申请日: 2012-05-23
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公开(公告)号: US08541328B2公开(公告)日: 2013-09-24
- 发明人: Morimichi Watanabe , Asumi Jindo , Yuji Katsuda , Yosuke Sato , Yoshinori Isoda
- 申请人: Morimichi Watanabe , Asumi Jindo , Yuji Katsuda , Yosuke Sato , Yoshinori Isoda
- 申请人地址: JP Nagoya
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JP Nagoya
- 代理机构: Burr & Brown
- 优先权: JP2010-238999 20101025; JP2011-135313 20110617; WOPCT/JP2011/069491 20110829
- 主分类号: C04B35/00
- IPC分类号: C04B35/00
摘要:
A ceramic material according to the present invention mainly contains magnesium, aluminum, oxygen, and nitrogen, the ceramic material has the crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved in magnesium oxide, the crystal phase serving as a main phase. Preferably, XRD peaks corresponding to the (200) and (220) planes of the MgO—AlN solid solution measured with CuKα radiation appear at 2θ=42.9 to 44.8° and 62.3 to 65.2°, respectively, the XRD peaks being located between peaks of cubic magnesium oxide and peaks of cubic aluminum nitride. More preferably, the XRD peak corresponding to the (111) plane appears at 2θ=36.9 to 39°, the XRD peak being located between a peak of cubic magnesium oxide and a peak of cubic aluminum nitride.
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