Invention Grant
- Patent Title: Methods of forming an insulating metal oxide
- Patent Title (中): 形成绝缘金属氧化物的方法
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Application No.: US13442140Application Date: 2012-04-09
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Publication No.: US08541276B2Publication Date: 2013-09-24
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A dielectric containing an insulating metal oxide film having multiple metal components and a method of fabricating such a dielectric produce a reliable dielectric for use in a variety of electronic devices. Embodiments include a titanium aluminum oxide film structured as one or more monolayers. Embodiments also include structures for capacitors, transistors, memory devices, and electronic systems with dielectrics containing a titanium aluminum oxide film.
Public/Granted literature
- US20120196448A1 METHODS OF FORMING AN INSULATING METAL OXIDE Public/Granted day:2012-08-02
Information query
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