发明授权
- 专利标题: Method for making field emission cathode device
- 专利标题(中): 场致发射阴极器件的制造方法
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申请号: US13754867申请日: 2013-01-30
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公开(公告)号: US08512090B2公开(公告)日: 2013-08-20
- 发明人: Peng Liu , Hai-Yan Hao , Shou-Shan Fan
- 申请人: Tsinghua University , Hon Hai Precision Industry Co., Ltd.
- 申请人地址: CN Beijing TW New Taipei
- 专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人地址: CN Beijing TW New Taipei
- 代理机构: Altis Law Group, Inc.
- 优先权: CN201010604389 20101224
- 主分类号: H01J9/02
- IPC分类号: H01J9/02 ; H01J9/04
摘要:
A method for making a field emission cathode device is provided. A filler, a substrate, and a metal plate are provided. The metal plate has a first surface and a second surface opposite to the first surface, and defines at least one through hole extending through from the first surface to the second surface. At least one electron emitter is inserted into the at least one through hole. The first surface of the metal plate is attached to the substrate. At least a part of the at least one electron emitter is located between the first surface and the substrate. The at least one through hole is filled with the filler to firmly fix the at least one electron emitter.
公开/授权文献
- US20130143465A1 METHOD FOR MAKING FIELD EMISSION CATHODE DEVICE 公开/授权日:2013-06-06
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