发明授权
- 专利标题: Control method of non-volatile semiconductor device
- 专利标题(中): 非易失性半导体器件的控制方法
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申请号: US12929939申请日: 2011-02-25
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公开(公告)号: US08510613B2公开(公告)日: 2013-08-13
- 发明人: Akiyoshi Seko
- 申请人: Akiyoshi Seko
- 申请人地址: JP Tokyo
- 专利权人: Elpida Memory, Inc.
- 当前专利权人: Elpida Memory, Inc.
- 当前专利权人地址: JP Tokyo
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2010-043006 20100226
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
A method includes temporarily storing write-data to be written into non-volatile memory cells, respectively, the memory cells being divided into cell groups, performing a first operation including write-phases performed in series and on an associated cell group and including applying a write-voltage to the memory cells belonging to the associated cell group in response to an associated write-data to be written into the memory cells belonging to the cell groups, and performing a second operation after the first operation is completed, which includes read-phases performed in series and on an associated cell group and including applying a first read-voltage to the memory cell or cells belonging to the associated one of the cell groups to produce first read-data therefrom, and comparing the first read-data with the write-data to be written into the memory cells belonging to the associated cell groups to produce comparison data.
公开/授权文献
- US20110214025A1 Control method of non-volatile semiconductor device 公开/授权日:2011-09-01
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