发明授权
- 专利标题: N-type group III nitride-based compound semiconductor and production method therefor
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申请号: US12453743申请日: 2009-05-20
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公开(公告)号: US08507364B2公开(公告)日: 2013-08-13
- 发明人: Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
- 申请人: Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
- 申请人地址: JP Nishikasugai-Gun, Aichi-Ken JP Nagoya-Shi, Aichi JP Suita-Shi, Osaka
- 专利权人: Toyoda Gosei Co., Ltd.,NGK Insulators, Ltd.,Osaka University
- 当前专利权人: Toyoda Gosei Co., Ltd.,NGK Insulators, Ltd.,Osaka University
- 当前专利权人地址: JP Nishikasugai-Gun, Aichi-Ken JP Nagoya-Shi, Aichi JP Suita-Shi, Osaka
- 代理机构: McGinn Intellectual Property Law Group, PLLC
- 优先权: JP2008-134836 20080522
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.
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