发明授权
US08498160B2 Nonvolatile memory device and related programming method using selective bit line precharging
有权
非易失性存储器件和使用选择性位线预充电的相关编程方法
- 专利标题： Nonvolatile memory device and related programming method using selective bit line precharging
- 专利标题（中）： 非易失性存储器件和使用选择性位线预充电的相关编程方法
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申请号： US12793007申请日： 2010-06-03
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公开(公告)号： US08498160B2公开(公告)日： 2013-07-30
- 发明人: Bo Geun Kim , Ki tae Park
- 申请人： Bo Geun Kim , Ki tae Park
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2009-0094376 20091005
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A method of programming a nonvolatile memory device comprises programming memory cells by performing a plurality of program loops with bitline precharging inactivated during program verification operations of some of the program loops, and with bitline precharging activated during program verification operations of some of the program loops.
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