发明授权
- 专利标题: Thin-film capacitor with internally hollow through holes
- 专利标题(中): 具有内部中空通孔的薄膜电容器
-
申请号: US12956060申请日: 2010-11-30
-
公开(公告)号: US08498095B2公开(公告)日: 2013-07-30
- 发明人: Yoshihiko Yano , Yasunobu Oikawa , Kenji Horino , Hitoshi Saita
- 申请人: Yoshihiko Yano , Yasunobu Oikawa , Kenji Horino , Hitoshi Saita
- 申请人地址: JP Tokyo
- 专利权人: TDK Corporation
- 当前专利权人: TDK Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff & Berridge, PLC
- 优先权: JPP2009-271987 20091130
- 主分类号: H01G4/005
- IPC分类号: H01G4/005 ; H01G4/20 ; H01G4/33 ; H01G4/012
摘要:
A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor according to the present embodiment, because through holes H are formed in internal electrodes containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 μm2 to 7.0 μm2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes and dielectric layers, and as a result, the yield is enhanced.
公开/授权文献
- US20110128669A1 THIN-FILM CAPACITOR 公开/授权日:2011-06-02
信息查询