发明授权
- 专利标题: Light emitting device and manufacturing method of the same
- 专利标题(中): 发光器件及其制造方法相同
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申请号: US13279478申请日: 2011-10-24
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公开(公告)号: US08497628B2公开(公告)日: 2013-07-30
- 发明人: Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
- 申请人: Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2002-125970 20020426
- 主分类号: H05B33/00
- IPC分类号: H05B33/00
摘要:
The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating material 19 that covers an end portion of a first electrode 18 is formed to have a curved surface having a radius of curvature, a second electrode 23a is formed to have a slant face as going from its center portion toward its end portion along the curved surface. Light emitted from a light emitting layer comprising an organic material 20 that is formed on the second electrode 23a is reflected at the slant face of the second electrode 23a to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
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