- 专利标题: Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device
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申请号: US13113638申请日: 2011-05-23
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公开(公告)号: US08497186B2公开(公告)日: 2013-07-30
- 发明人: Swarnal Borthakur , Marc Sulfridge
- 申请人: Swarnal Borthakur , Marc Sulfridge
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.
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