发明授权
- 专利标题： EDS protection diode with pwell-nwell resurf
- 专利标题（中）： EDS保护二极管与pwell-nwell resurf
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申请号： US11654736申请日： 2007-01-17
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公开(公告)号： US08497167B1公开(公告)日： 2013-07-30
- 发明人: Vladislav Vashchenko , Vladimir Kuznetsov , Peter J. Hopper
- 申请人： Vladislav Vashchenko , Vladimir Kuznetsov , Peter J. Hopper
- 申请人地址： US CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L31/107
- IPC分类号： H01L31/107 ; H01L23/60
摘要：
A high voltage ESD protection diode wherein the p-n junction is defined by a p-well and an n-well and includes a RESURF region, the diode including a field oxide layer formed on top of the p-well and n-well, wherein the parameters of the diode are adjustable by controlling one or more of the junction width, the length of the RESURF region, or the length of the field oxide layer.
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