发明授权
US08491983B2 Glass substrate for semiconductor device component and process for producing glass substrate for semiconductor device component
有权
用于半导体器件部件的玻璃基板和用于制造用于半导体器件部件的玻璃基板的工艺
- 专利标题： Glass substrate for semiconductor device component and process for producing glass substrate for semiconductor device component
- 专利标题（中）： 用于半导体器件部件的玻璃基板和用于制造用于半导体器件部件的玻璃基板的工艺
-
申请号： US13172638申请日： 2011-06-29
-
公开(公告)号： US08491983B2公开(公告)日： 2013-07-23
- 发明人: Motoshi Ono , Akio Koike
- 申请人： Motoshi Ono , Akio Koike
- 申请人地址： JP Tokyo
- 专利权人： Asahi Glass Company, Limited
- 当前专利权人： Asahi Glass Company, Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 优先权： JP2009-021751 20090202
- 主分类号： B32B3/24
- IPC分类号： B32B3/24 ; B23K26/40
摘要：
It is an object of the present invention to provide a glass substrate having plural through-holes which is not likely to peel from a silicon wafer, even though laminated on and jointed to a the silicon wafer and then subjected to heat treatment. The above object is accomplished by a glass substrate having an average thermal expansion coefficient of from 10×10−7 to 50×10−7/K within a range of from 50° C. to 300° C., having plural through-holes with a taper angle of from 0.1 to 20° and having a thickness of from 0.01 to 5 mm.
公开/授权文献
信息查询
