The present invention relates to a solid-state imaging device and the like having a structure for capturing a high-resolution image even when any of the reading-out wiring and row selecting wiring is disconnected. A pixel portion Pm,n of the photodetecting section (10) includes a photodiode PD generating charge of an amount according to an incident light intensity and a reading-out switch SW1 connected to the photodiode PD. The pixel portion Pm,n occupies a substantially square region, and most of the region is a region of the photodiode PD. A field-effect transistor serving as the reading-out switch SW1 is formed in one corner of the region. A channel stopper CS is continuously formed in a region sandwiched by pixel portions. In a region surrounded by any 2×2 pixel portions adjacent to one another, a dummy photodiode PD1 surrounded by the channel stopper CS is formed.