Invention Grant
US08487419B2 Method of manufacturing semiconductor apparatus, the semiconductor apparatus, and ignitor using the semiconductor apparatus
有权
制造半导体装置的方法,半导体装置以及使用该半导体装置的点火器
- Patent Title: Method of manufacturing semiconductor apparatus, the semiconductor apparatus, and ignitor using the semiconductor apparatus
- Patent Title (中): 制造半导体装置的方法,半导体装置以及使用该半导体装置的点火器
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Application No.: US13347898Application Date: 2012-01-11
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Publication No.: US08487419B2Publication Date: 2013-07-16
- Inventor: Takashi Katsuki
- Applicant: Takashi Katsuki
- Applicant Address: JP
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2011-003893 20110112
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A method of manufacturing a semiconductor apparatus according to aspects of the invention can include the steps of coating solder on an predetermined area in the upper surface of a lead frame, mounting a chip on solder and melting solder with a hot plate for bonding the chip to the lead frame. The method can also include wiring with bonding wires, turning lead frame upside down, placing lead frame turned upside down on heating cradle, coating solder, the melting point of which is lower than the solder melting point and mounting electronic part on solder; and melting solder with heating cradle for bonding electronic part to lead frame. The bonding with solder can be conducted at a high ambient temperature. Aspects of the semiconductor apparatus can facilitate mounting semiconductor devices and electronic parts on both surfaces of a lead frame divided to form wiring circuits without through complicated manufacturing steps.
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