Invention Grant
US08486827B2 Device of filling metal in through-via-hole of semiconductor wafer and method using the same
有权
在半导体晶片的通孔中填充金属的装置及其使用方法
- Patent Title: Device of filling metal in through-via-hole of semiconductor wafer and method using the same
- Patent Title (中): 在半导体晶片的通孔中填充金属的装置及其使用方法
-
Application No.: US13262293Application Date: 2009-12-30
-
Publication No.: US08486827B2Publication Date: 2013-07-16
- Inventor: Se Hoon Yoo , Chang Woo Lee , Jun Ki Kim , Jeong Han Kim , Cheol Hee Kim , Young Ki Ko , Yue Seon Shin
- Applicant: Se Hoon Yoo , Chang Woo Lee , Jun Ki Kim , Jeong Han Kim , Cheol Hee Kim , Young Ki Ko , Yue Seon Shin
- Applicant Address: KR Cheonan-si, Chungnam
- Assignee: Korea Institute of Industrial Technology
- Current Assignee: Korea Institute of Industrial Technology
- Current Assignee Address: KR Cheonan-si, Chungnam
- Agency: Sherr & Jiang, PLLC
- Priority: KR10-2009-0029081 20090403
- International Application: PCT/KR2009/007983 WO 20091230
- International Announcement: WO2010/114216 WO 20101007
- Main IPC: H01L21/768
- IPC: H01L21/768

Abstract:
A device of filling metal in a through-via-hole formed in a semiconductor wafer and a method of filling metal in a through-via-hole using the same are disclosed. A device of filling metal in a through-via-hole formed in a semiconductor wafer includes a jig base comprising a jig configured to fix the wafer having the through-via-hole formed therein; a upper chamber 120 installed on the jig base; a lower chamber installed under the jig base; a heater installed in the upper chamber, the heater configured to apply heat to filling metal placed on the wafer to melt the filling metal; and a vacuum pump configured to generate pressure difference between the upper chamber and the lower chamber by the pressure of the lower chamber reduced by discharging air of the lower chamber 130 outside, only to fill the melted filling metal in the through-via-hole.
Public/Granted literature
- US20120034776A1 DEVICE OF FILLING METAL IN THROUGH-VIA-HOLE OF SEMICONDUCTOR WAFER AND METHOD USING THE SAME Public/Granted day:2012-02-09
Information query
IPC分类: