Invention Grant
- Patent Title: Method of fabricating transistors
- Patent Title (中): 制造晶体管的方法
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Application No.: US13444855Application Date: 2012-04-12
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Publication No.: US08486795B2Publication Date: 2013-07-16
- Inventor: Wen-Han Hung , Tsai-Fu Chen , Shyh-Fann Ting , Cheng-Tung Huang , Kun-Hsien Lee , Ta-Kang Lo , Tzyy-Ming Cheng
- Applicant: Wen-Han Hung , Tsai-Fu Chen , Shyh-Fann Ting , Cheng-Tung Huang , Kun-Hsien Lee , Ta-Kang Lo , Tzyy-Ming Cheng
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A method of fabricating transistors includes: providing a substrate including an N-type well and P-type well; forming a first gate on the N-type well and a second gate on the P-type well, respectively; forming a third spacer on the first gate; forming an epitaxial layer in the substrate at two sides of the first gate; forming a fourth spacer on the second gate; forming a silicon cap layer covering the surface of the epitaxial layer and the surface of the substrate at two sides of the fourth spacer; and forming a first source/drain doping region and a second source/drain doping region at two sides of the first gate and the second gate respectively.
Public/Granted literature
- US20120196418A1 METHOD OF FABRICATING TRANSISTORS Public/Granted day:2012-08-02
Information query
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