Invention Grant
- Patent Title: Materials, systems and methods for optoelectronic devices
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Application No.: US13218937Application Date: 2011-08-26
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Publication No.: US08476727B2Publication Date: 2013-07-02
- Inventor: Hui Tian , Edward Sargent
- Applicant: Hui Tian , Edward Sargent
- Applicant Address: US CA Menlo Park
- Assignee: InVisage Technologies, Inc.
- Current Assignee: InVisage Technologies, Inc.
- Current Assignee Address: US CA Menlo Park
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
Public/Granted literature
- US20120056076A1 MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES Public/Granted day:2012-03-08
Information query
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