发明授权
- 专利标题: Annealing of single crystals
- 专利标题(中): 单晶退火
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申请号: US12121459申请日: 2008-05-15
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公开(公告)号: US08470089B2公开(公告)日: 2013-06-25
- 发明人: Dominique Richaud , Alain Iltis , Vladimir Ouspenski
- 申请人: Dominique Richaud , Alain Iltis , Vladimir Ouspenski
- 申请人地址: FR Courbevoie
- 专利权人: Saint-Gobain Cristaux et Detecteurs
- 当前专利权人: Saint-Gobain Cristaux et Detecteurs
- 当前专利权人地址: FR Courbevoie
- 代理机构: Abel Law Group, LLP
- 优先权: FR0852072 20080331
- 主分类号: C30B1/02
- IPC分类号: C30B1/02
摘要:
The invention relates to a process for manufacturing a single crystal comprising a rare-earth halide, having improved machining or cleavage behavior, comprising heat treatment in a furnace, the atmosphere of which is brought, for at least 1 hour, to between 0.70 times Tm and 0.995 times Tm of a single crystal comprising a rare-earth halide, Tm representing the melting point of said single crystal, the temperature gradient at any point in the atmosphere of the furnace being less than 15 K/cm for said heat treatment. After carrying out the treatment according to the invention, the single crystals may be machined or cleaved without uncontrolled fracture. The single crystals may be used in a medical imaging device, especially a positron emission tomography system or a gamma camera or a CT scanner, for crude oil exploration, for detection and identification of fissile or radioactive materials, for nuclear and high-energy physics, for astrophysics or for industrial control.
公开/授权文献
- US20090246495A1 ANNEALING OF SINGLE CRYSTALS 公开/授权日:2009-10-01
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