发明授权
- 专利标题： MRAM device and method of assembling same
- 专利标题（中）： MRAM装置及其组装方法
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申请号： US13334006申请日： 2011-12-21
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公开(公告)号： US08466539B2公开(公告)日： 2013-06-18
- 发明人: Jun Li , Jianhong Wang , Xuesong Xu , Jinzhong Yao , Wanming Yu
- 申请人： Jun Li , Jianhong Wang , Xuesong Xu , Jinzhong Yao , Wanming Yu
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor Inc.
- 当前专利权人： Freescale Semiconductor Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Charles Bergere
- 优先权： CN201110044560 20110223
- 主分类号： H01L23/552
- IPC分类号： H01L23/552
摘要：
A method of assembling a magnetoresistive random access memory (MRAM) device includes providing a substrate having an opening. A tape is applied to a surface of the substrate and a first magnetic shield is placed onto the tape and within the substrate opening. An adhesive is applied between the first magnetic shield and the substrate to attach the first magnetic shield to the substrate. An MRAM die is attached to the first magnetic shield and bond pads of the MRAM die are connected to pads on the substrate with wires. A second magnetic shield is attached to a top surface of the MRAM die. An encapsulating material is dispensed onto the substrate, the MRAM die, the second magnetic shield and part of the first magnetic shield, cured, and then the tape is removed. Solder balls then may be attached to the substrate.
公开/授权文献
- US20120211846A1 MRAM DEVICE AND METHOD OF ASSEMBLING SAME 公开/授权日：2012-08-23
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