Invention Grant
US08466479B2 Light emitting diodes (LEDs) with improved light extraction by roughening
有权
发光二极管（LED）通过粗糙化改进光提取
- Patent Title: Light emitting diodes (LEDs) with improved light extraction by roughening
- Patent Title (中): 发光二极管（LED）通过粗糙化改进光提取
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Application No.: US12986946Application Date: 2011-01-07
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Publication No.: US08466479B2Publication Date: 2013-06-18
- Inventor: Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
- Applicant: Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
- Applicant Address: TW Chu-Nan, Miao-Li County
- Assignee: SemiLEDs Optoelectronics Co., Ltd.
- Current Assignee: SemiLEDs Optoelectronics Co., Ltd.
- Current Assignee Address: TW Chu-Nan, Miao-Li County
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00
Abstract:
Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
Public/Granted literature
- US20110101400A1 LIGHT EMITTING DIODES (LEDS) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING Public/Granted day:2011-05-05
Information query
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