发明授权
US08455940B2 Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device
有权
非易失性存储器件，非易失性存储器件的制造方法以及包括非易失性存储器件的存储器模块和系统
- 专利标题： Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device
- 专利标题（中）： 非易失性存储器件，非易失性存储器件的制造方法以及包括非易失性存储器件的存储器模块和系统
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申请号： US13100488申请日： 2011-05-04
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公开(公告)号： US08455940B2公开(公告)日： 2013-06-04
- 发明人: Jae-goo Lee , Young-woo Park , Byung-kwan You , Dong-sik Lee , Sang-yong Park
- 申请人： Jae-goo Lee , Young-woo Park , Byung-kwan You , Dong-sik Lee , Sang-yong Park
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR10-2010-0048188 20100524; KR10-2010-0080886 20100820
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A nonvolatile memory device includes a substrate, a channel layer protruding from the substrate, a gate conductive layer surrounding the channel layer, a gate insulating layer disposed between the channel layer and the gate conductive layer, and a first insulating layer spaced apart from the channel layer and disposed on the top and bottom of the gate conductive layer. The gate insulating layer extends between the gate conductive layer and the first insulating layer.
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