发明授权
US08455938B2 Device comprising a field-effect transistor in a silicon-on-insulator
有权
装置包括绝缘体上硅中的场效应晶体管
- 专利标题： Device comprising a field-effect transistor in a silicon-on-insulator
- 专利标题（中）： 装置包括绝缘体上硅中的场效应晶体管
-
申请号： US12886421申请日： 2010-09-20
-
公开(公告)号： US08455938B2公开(公告)日： 2013-06-04
- 发明人: Bich-Yen Nguyen , Carlos Mazure , Richard Ferrant
- 申请人： Bich-Yen Nguyen , Carlos Mazure , Richard Ferrant
- 申请人地址： FR Bernin
- 专利权人： Soitec
- 当前专利权人： Soitec
- 当前专利权人地址： FR Bernin
- 代理机构： Winston & Strawn LLP
- 优先权： EP10290217 20100422
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L27/12
摘要：
The present invention relates to a semiconductor device that has a semiconductor-on-insulator (SeOI) structure, which includes a substrate, an insulating layer such as an oxide layer on the substrate and a semiconductor layer on the insulating layer with a field-effect-transistor (FET) formed in the SeOI structure from the substrate and deposited layers, wherein the FET has a channel region in the substrate, a gate dielectric layer that is made from at least a part of the oxide layer of the SeOI structure; and a gate electrode that is formed at least partially from a part of the semiconductor layer of the SeOI structure. The invention further relates to a method of forming one or more field-effect-transistors or metal-oxide-semiconductor transistors from a semiconductor-on-insulator structure that involves patterning and etching the SeOI structure, forming shallow trench isolations, depositing insulating, metal or semiconductor layers, and removing mask and/or pattern layers.
公开/授权文献
信息查询
IPC分类:
