Invention Grant
- Patent Title: High density thyristor random access memory device and method
- Patent Title (中): 高密度可控硅随机存取存储器件及方法
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Application No.: US12838803Application Date: 2010-07-19
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Publication No.: US08455919B2Publication Date: 2013-06-04
- Inventor: Suraj J. Mathew , Chandra Mouli
- Applicant: Suraj J. Mathew , Chandra Mouli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/332
- IPC: H01L21/332 ; H01L29/66
Abstract:
Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided allow trace wiring in a memory array to be formed on or near a surface of a memory device.
Public/Granted literature
- US20120012892A1 HIGH DENSITY THYRISTOR RANDOM ACCESS MEMORY DEVICE AND METHOD Public/Granted day:2012-01-19
Information query
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