Invention Grant
- Patent Title: Magnetic tunnel junction patterning using Ta/TaN as hard mask
- Patent Title (中): 磁隧道结图案使用Ta / TaN作为硬掩模
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Application No.: US11378555Application Date: 2006-03-17
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Publication No.: US08450119B2Publication Date: 2013-05-28
- Inventor: Chyu-Jiuh Torng , Wei Cao , Terry Ko
- Applicant: Chyu-Jiuh Torng , Wei Cao , Terry Ko
- Applicant Address: US CA Milpitas
- Assignee: MagIC Technologies, Inc.
- Current Assignee: MagIC Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/00
Abstract:
An MTJ MRAM cell is formed by using a reactive ion etch (RIE) to pattern an MTJ stack on which there has been formed a bilayer Ta/TaN hard mask. The hard mask is formed by patterning a masking layer that has been formed by depositing a layer of TaN over a layer of Ta on the MTJ stack. After the stack is patterned, the TaN layer serves at least two advantageous purposes: 1) it protects the Ta layer from oxidation during the etching of the stack and 2) it serves as a surface having excellent adhesion properties for a subsequently deposited dielectric layer.
Public/Granted literature
- US20070215911A1 Magnetic tunnel junction patterning using Ta/TaN as hard mask Public/Granted day:2007-09-20
Information query
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