发明授权
- 专利标题： Schottky diode structure and method for fabricating the same
- 专利标题（中）： 肖特基二极管结构及其制造方法
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申请号： US12816765申请日： 2010-06-16
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公开(公告)号： US08436361B2公开(公告)日： 2013-05-07
- 发明人: Shuo-Hung Hsu , Yi-Wei Lian , Yu-Syuan Lin
- 申请人： Shuo-Hung Hsu , Yi-Wei Lian , Yu-Syuan Lin
- 申请人地址： TW Hsinchu
- 专利权人： National Tsing Hua University
- 当前专利权人： National Tsing Hua University
- 当前专利权人地址： TW Hsinchu
- 代理机构： Muncy, Geissler, Olds & Lowe, PLLC
- 主分类号： H01L31/0256
- IPC分类号： H01L31/0256
摘要：
A Schottky diode structure and a method for fabricating the same, which are based on the principle of charge compensation, wherein a P-type gallium nitride layer is added to a Schottky diode structure, and wherein the PN junction of the P-type gallium nitride layer and the N-type gallium nitride layer decreases the non-uniformity of the surface electric field distribution, whereby the breakdown voltage of the element is raised.
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