发明授权
US08423153B2 Method for producing implant structures for contacting or electrostimulation of living tissue cells or nerves 有权
用于生产用于接触或电刺激活组织细胞或神经的植入物结构的方法

  • 专利标题: Method for producing implant structures for contacting or electrostimulation of living tissue cells or nerves
  • 专利标题(中): 用于生产用于接触或电刺激活组织细胞或神经的植入物结构的方法
  • 申请号: US12296519
    申请日: 2007-01-26
  • 公开(公告)号: US08423153B2
    公开(公告)日: 2013-04-16
  • 发明人: Hans-Jurgen Tiedtke
  • 申请人: Hans-Jurgen Tiedtke
  • 申请人地址: CH Zug
  • 专利权人: IMI Intelligent Medical Implants, AG
  • 当前专利权人: IMI Intelligent Medical Implants, AG
  • 当前专利权人地址: CH Zug
  • 代理机构: Workman Nydegger
  • 优先权: DE102006017549 20060413
  • 国际申请: PCT/EP2007/000686 WO 20070126
  • 国际公布: WO2007/118527 WO 20071025
  • 主分类号: A61N1/04
  • IPC分类号: A61N1/04
Method for producing implant structures for contacting or electrostimulation of living tissue cells or nerves
摘要:
The object, to create a method for producing multilayers or multilayer systems wherein the structures generated on a substrate can easily be jointly detached from the substrate and are preserved in a composite, is achieved by the present invention by means of a method for producing implant structures comprising generating a first metal layer on a substrate, generating a second metal layer above the first metal layer, producing a number of multilayered implant structures above the second metal layer, removing the first metal layer between the substrate and the second metal layer, and releasing the implant structures from the substrate in a coherent composite. With the method according to the invention, between the implant structures and the substrate a release layer is generated consisting of two or three metal layers which serve as sacrificial layer in the course of releasing the fully processed multilayers by means of an under-etching process. As a result, a uniform and reliable separation of the finished multilayers from the substrate in a composite is achieved, facilitating the subsequent technology for assembly and interconnection of the implant structures.
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