Invention Grant
US08421070B2 ZnO based semiconductor devices and methods of manufacturing the same
有权
基于ZnO的半导体器件及其制造方法
- Patent Title: ZnO based semiconductor devices and methods of manufacturing the same
- Patent Title (中): 基于ZnO的半导体器件及其制造方法
-
Application No.: US12929324Application Date: 2011-01-14
-
Publication No.: US08421070B2Publication Date: 2013-04-16
- Inventor: Chang-jung Kim , I-hun Song , Dong-hun Kang , Young-soo Park
- Applicant: Chang-jung Kim , I-hun Song , Dong-hun Kang , Young-soo Park
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0034675 20060417; KR10-2006-0043943 20060516; KR10-2007-0029380 20070326
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO) Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.
Public/Granted literature
- US20110101343A1 ZnO based semiconductor devices and methods of manufacturing the same Public/Granted day:2011-05-05
Information query
IPC分类:
