- 专利标题： Flash memory device using adaptive program verification scheme and related method of operation
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申请号： US12963867申请日： 2010-12-09
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公开(公告)号： US08411502B2公开(公告)日： 2013-04-02
- 发明人: Sang Yong Yoon , Ki Tae Park , Moo Sung Kim , Bo Geun Kim , Hyun jun Yoon
- 申请人： Sang Yong Yoon , Ki Tae Park , Moo Sung Kim , Bo Geun Kim , Hyun jun Yoon
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2010-0012894 20100211
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.
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