Invention Grant
- Patent Title: Semiconductor device including graphene and method of manufacturing the semiconductor device
- Patent Title (中): 包括石墨烯的半导体器件和制造半导体器件的方法
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Application No.: US13286592Application Date: 2011-11-01
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Publication No.: US08405133B2Publication Date: 2013-03-26
- Inventor: Hyun-jong Chung , Jae-ho Lee , Jae-hong Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
- Applicant: Hyun-jong Chung , Jae-ho Lee , Jae-hong Lee , Hyung-cheol Shin , Sun-ae Seo , Sung-hoon Lee , Jin-seong Heo , Hee-jun Yang
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0109778 20101105
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
In a semiconductor device including graphene, a gate insulating layer may be formed between a gate electrode and a graphene layer, and an interlayer insulating layer may be formed under a portion of the graphene layer under which the gate insulating layer is not formed. The gate insulating layer may include a material that has higher dielectric permittivity than the interlayer insulating layer.
Public/Granted literature
- US20120112250A1 Semiconductor Device Including Graphene And Method Of Manufacturing The Semiconductor Device Public/Granted day:2012-05-10
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