发明授权
US08384873B2 Drill for repairing point defect in liquid crystal device and method of manufacturing liquid crystal device 有权
用于液晶装置修补点缺陷的钻孔及液晶装置的制造方法

  • 专利标题: Drill for repairing point defect in liquid crystal device and method of manufacturing liquid crystal device
  • 专利标题(中): 用于液晶装置修补点缺陷的钻孔及液晶装置的制造方法
  • 申请号: US12602968
    申请日: 2008-02-01
  • 公开(公告)号: US08384873B2
    公开(公告)日: 2013-02-26
  • 发明人: Masaki Ikeda
  • 申请人: Masaki Ikeda
  • 申请人地址: JP Osaka
  • 专利权人: Sharp Kabushiki Kaisha
  • 当前专利权人: Sharp Kabushiki Kaisha
  • 当前专利权人地址: JP Osaka
  • 代理机构: Birch, Stewart, Kolasch & Birch, LLP
  • 优先权: JP2007-148328 20070604
  • 国际申请: PCT/JP2008/051639 WO 20080201
  • 国际公布: WO2008/149574 WO 20081211
  • 主分类号: G02F1/13
  • IPC分类号: G02F1/13
Drill for repairing point defect in liquid crystal device and method of manufacturing liquid crystal device
摘要:
A drill 40 for repairing a point defect in a liquid crystal device 10 in accordance with the present invention is the drill 40 for cutting the glass substrate 11 included in the liquid crystal device 10 so as to repair the point defect in the liquid crystal device 10. The drill 40 is characterized by having a point angle PA from 130 to 180 deg.
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