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US08384439B2 Semiconductor devices and methods of fabricating the same 有权
半导体器件及其制造方法

Semiconductor devices and methods of fabricating the same
Abstract:
Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device.
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